Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm²

Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects

Spatial Inhomogeneity of Photoluminescence in InGaN Single Quantum Well Structures

Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW) structure by means of fluorescence microscopy and scanning near-field optical microscopy (SNOM) under illumination-collection mode. The PL intensity of fluorescence image is uniform at 77 K, but the dark spot areas were extended with increasing temperature. The nearfield PL images reve...

circuit modeling of quantum well heterostructure biopolar phototransistor مدل سازی مداری qw-hbpt

چکیده ندارد.

Electroluminescence efficiency of blue InGaN/GaN quantum-well diodes with and without an n-InGaN electron reservoir layer

The temperature dependence of the electroluminescence EL spectral intensity has been investigated in detail between T=20 and 300 K at various injection current levels for a set of two blue InGaN/GaN multiple-quantum-well MQW light-emitting diodes LEDs with and without an additional n-doped In0.18Ga0.82N electron reservoir layer ERL . The radiative recombination efficiency of the main blue emiss...

Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness

InGaN/GaN multiple-quantum-well MQW light-emitting diodes with varied InGaN quantum well thicknesses are fabricated and characterized. The investigation of luminous efficiency versus current density reveals a variety of efficiency droop behaviors. It is found that the efficiency droop can be drastically reduced by increasing the quantum well thickness of the MQW structures. On the other hand, r...